IXTH28N50Q
Key Features
- 13/10 Nm/. 6 4 g g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 25 1 0.20 V V nA µA mA Ω z z
