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IXTH28N50Q - Power MOSFET

Key Features

  • z z 1.13/10 Nm/lb. in. 6 4 g g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 25 1 0.20 V V nA µA mA Ω z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V Rated for unclamped Induc.

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Part Number Description
IXTT28N50Q Power MOSFET

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www.DataSheet4U.com Advanced Technical Information Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXTH 28N50Q IXTT 28N50Q VDSS = 500 V = 28 A ID25 RDS(on) = 0.20 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ±30 ±40 28 112 28 40 1.5 10 400 -55 to +150 150 -55 to +150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXTH) (TAB) TO-268 (D3) ( IXTT) G S (TAB) G = Gate D = Drain S = Source TAB = Drain 1.6 mm (0.