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IXTT28N50Q - Power MOSFET

Download the IXTT28N50Q datasheet PDF. This datasheet also covers the IXTH28N50Q variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z 1.13/10 Nm/lb. in. 6 4 g g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 25 1 0.20 V V nA µA mA Ω z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V Rated for unclamped Induc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH28N50Q_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IXTH28N50Q Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Advanced Technical Information Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXTH 28N50Q IXTT 28N50Q VDSS = 500 V = 28 A ID25 RDS(on) = 0.20 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ±30 ±40 28 112 28 40 1.5 10 400 -55 to +150 150 -55 to +150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXTH) (TAB) TO-268 (D3) ( IXTT) G S (TAB) G = Gate D = Drain S = Source TAB = Drain 1.6 mm (0.