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JANS2N6849 Datasheet

Manufacturer: International Rectifier (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

JANS2N6849 datasheet preview

Datasheet Details

Part number JANS2N6849
Datasheet JANS2N6849 JANS2N6849-1 Datasheet (PDF)
File Size 1.27 MB
Manufacturer International Rectifier (now Infineon)
Description Repetitive Avalanche and dv/dt Rated Power MOSFET
JANS2N6849 page 2 JANS2N6849 page 3

JANS2N6849 Overview

HEXFET POWER MOSFET technology is the key to IR HiRel’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance bined with high transconductance.

JANS2N6849 Key Features

  • Repetitive avalanche ratings
  • Dynamic dv/dt rating
  • Hermetically sealed
  • Simple drive requirements
  • ESD rating: Class 1C per MIL-STD-750, Method 1020
  • BVDSS: -100V
  • ID : -6.5A
  • RDS(on),max : 0.30
  • QG, max: 34.8nC
  • REF: MIL-PRF-19500/564
International Rectifier (now Infineon) logo - Manufacturer

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