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JANS2N6849 - Repetitive Avalanche and dv/dt Rated Power MOSFET

Download the JANS2N6849 datasheet PDF. This datasheet also covers the JANS2N6849-1 variant, as both devices belong to the same repetitive avalanche and dv/dt rated power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

HEXFET POWER MOSFET technology is the key to IR HiRel’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance.

Key Features

  • Repetitive avalanche ratings.
  • Dynamic dv/dt rating.
  • Hermetically sealed.
  • Simple drive requirements.
  • ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: -100V.
  • ID : -6.5A.
  • RDS(on),max : 0.30.
  • QG, max: 34.8nC.
  • REF: MIL-PRF-19500/564 Potential.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (JANS2N6849-1-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFF9130 (JANS2N6849) Repetitive Avalanche and dv/dt Rated Power MOSFET Thru-Hole (TO-205AF / TO-39) -100V, -6.5A, P-channel PD-90550H Features • Repetitive avalanche ratings • Dynamic dv/dt rating • Hermetically sealed • Simple drive requirements • ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary • BVDSS: -100V • ID : -6.5A • RDS(on),max : 0.30 • QG, max: 34.8nC • REF: MIL-PRF-19500/564 Potential Applications • DC-DC converter • Motor drives Product Validation TO-205AF / TO-39 Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description HEXFET POWER MOSFET technology is the key to IR HiRel’s advanced line of power MOSFET transistors.