JANS2N6849 Description
HEXFET POWER MOSFET technology is the key to IR HiRel’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance bined with high transconductance.
JANS2N6849 Key Features
- Repetitive avalanche ratings
- Dynamic dv/dt rating
- Hermetically sealed
- Simple drive requirements
- ESD rating: Class 1C per MIL-STD-750, Method 1020
- BVDSS: -100V
- ID : -6.5A
- RDS(on),max : 0.30
- QG, max: 34.8nC
- REF: MIL-PRF-19500/564