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JANSG2N7697UFHC Datasheet Radiation Hardened GaN transistor

Manufacturer: International Rectifier (now Infineon)

Overview: IG1NT052N10R (JANSG2N7697UFHC) Radiation Hardened GaN transistor Surface Mount (PowIR-SMD) 100V, 52A, N-channel, Enhancement mode.

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General Description

IG1NT052N10R is part of the IR HiRel family of products.

IR HiRel radiation hardened GaN transistor technology provides high performance power devices for space applications.

These devices have been characterized for both Total Ionizing Dose (TID) and Single Event Effects (SEE).

Key Features

  • Single event effect (SEE) hardened up to LET (GAN) 1 = 70 MeV. cm2/mg (Au ion).
  • Ultra low RDS(on).
  • Low total gate charge.
  • Zero reverse recovery charge.
  • Hermetically sealed ceramic package.
  • Surface mount.
  • Light weight.
  • ESD rating: Class 1C per MIL-STD-750, Method 1020 Product Summary.
  • VDS max: 100V.
  • ID: 52A.
  • RDS(on) max : 6.0mī—.
  • QG max: 13nC.
  • Size: 7.1mm x 5.3mm.
  • REF: MIL.

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