JANSG2N7697UFHC
Features
- Single event effect (SEE) hardened up to LET (GAN) 1 = 70 Me V.cm2/mg (Au ion)
- Ultra low RDS(on)
- Low total gate charge
- Zero reverse recovery charge
- Hermetically sealed ceramic package
- Surface mount
- Light weight
- ESD rating: Class 1C per MIL-STD-750, Method 1020
Product Summary
- VDS max: 100V
- ID: 52A
- RDS(on) max : 6.0m
- QG max: 13n C
- Size: 7.1mm x 5.3mm
- REF: MIL-PRF-19500 / 794
Potential Applications
- Isolated DC-DC converters
- Point-of-load (Po L) converters for FPGA, ASIC and DSP core rails
- Synchronous rectification
- Motor drives
Pow IR-SMD
Product Validation
Validated based on MIL-PRF-19500 for space applications
Description
IG1NT052N10R is part of the IR Hi Rel family of products. IR Hi Rel radiation hardened Ga N transistor technology provides high performance power devices for space applications. These devices have been characterized for both Total Ionizing Dose (TID) and Single Event Effects (SEE). The bination of low RDS(on), low gate...
