Datasheet Details
| Part number | JANSG2N7697UFHC |
|---|---|
| Manufacturer | International Rectifier |
| File Size | 664.93 KB |
| Description | Radiation Hardened GaN transistor |
| Datasheet |
 JANSG2N7697UFHC Datasheet
|
|
|
| Part number | JANSG2N7697UFHC |
|---|---|
| Manufacturer | International Rectifier |
| File Size | 664.93 KB |
| Description | Radiation Hardened GaN transistor |
| Datasheet |
JANSG2N7697UFHC Datasheet
|
|
|
|
IG1NT052N10R is part of the IR HiRel family of products.
IR HiRel radiation hardened GaN transistor technology provides high performance power devices for space applications.
These devices have been characterized for both Total Ionizing Dose (TID) and Single Event Effects (SEE).