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JANSR2N7470T1 - RADIATION HARDENED POWER MOSFET

Key Features

  • n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Units 45.
  • 45.
  • A 180.

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📁 Similar Datasheet

Part Number Description Manufacturer
JANSR2N7400 8A/ 200V/ 0.440 Ohm/ Rad Hard/ N-Channel Power MOSFET Intersil Corporation
JANSR2N7401 6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET Intersil Corporation
JANSR2N7402 3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET Intersil Corporation
JANSR2N7403 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET Intersil Corporation
JANSR2N7404 15A/ -200V/ 0.290 Ohm/ Rad Hard/ P-Channel Power MOSFET Intersil Corporation

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
JANSR2N7471T1 RADIATION HARDENED POWER MOSFET
JANSR2N7475T1 RADIATION HARDENED POWER MOSFET
JANSR2N7476T1 RADIATION HARDENED POWER MOSFET
JANSR2N7477T1 RADIATION HARDENED POWER MOSFET
JANSR2N7478T1 RADIATION HARDENED POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD-95838C IRHMS57064 RADIATION HARDENED JANSR2N7470T1 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-PRF-19500/698 5 TECHNOLOGY ™ Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57064 100K Rads (Si) 0.0066Ω 45A* JANSR2N7470T1 IRHMS53064 300K Rads (Si) 0.0066Ω 45A* JANSF2N7470T1 IRHMS54064 500K Rads (Si) 0.0066Ω 45A* JANSG2N7470T1 IRHMS58064 1000K Rads (Si) 0.0066Ω 45A* JANSH2N7470T1 Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).