| Part number | JANSR2N7478T1 |
|---|---|
| Datasheet | JANSR2N7478T1-InternationalRectifier.pdf |
| File Size | 158.12 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | RADIATION HARDENED POWER MOSFET |
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PD-96961B IRHMS57Z60 RADIATION HARDENED JANSR2N7478T1 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) REF: These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| JANSR2N7470T1 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7471T1 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7475T1 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7476T1 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7477T1 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7425 | POWER MOSFET |
| JANSR2N7432 | Radiation Hardened Power MOSFET |
| JANSR2N7489T3 | RADIATION HARDENED POWER MOSFET |
| JANSR2N7261 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
| JANSR2N7262 | Radiation Hardened Power MOSFET |
