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JANSR2N7500U5 Datasheet Radiation Hardened Power MOSFET Surface Mount

Manufacturer: International Rectifier (now Infineon)

Overview: www.DataSheet4U.com PD - 94325A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) Product Summary Part Number IRHE57133SE Radiation Level 100K Rads (Si) RDS(on) 0.13 Ω IRHE57133SE JANSR2N7500U5 130V, N-CHANNEL REF: MIL-PRF-19500/707 5 TECHNOLOGY ™ ID QPL Part Number 9.0A JANSR2N7500U5 LCC-18 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Av.

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