JANSR2N7666T1 Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

JANSR2N7666T1 radiation hardened power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	JANSR2N7666T1
Manufacturer	International Rectifier (now Infineon)
File Size	519.89 KB
Description	Radiation Hardened Power MOSFET
Datasheet	JANSR2N7666T1 Datasheet

General Description

IR HiRel R9 technology provides superior power MOSFETs for space applications.

This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90.5 MeV·cm2/mg.

Overview

IRHMS9A97260 (JANSR2N7666T1) PD-97991 Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -200V, -45A, P-channel, R9 Superjunction.

Key Features

Single event effect (SEE) hardened (up to LET of 90.5 MeV.
cm2/mg).
Low RDS(on).
Improved SOA for linear mode operation.
Fast switching.
Low total gate charge.
Simple drive requirements.
Hermetically sealed.
Electrically isolated.
Ceramic eyelets.
Light weight.
ESD rating: Class 3B per MIL-STD-750, Method 1020 Potential.

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