Datasheet4U Logo Datasheet4U.com

JANTX2N6764 Datasheet POWER MOSFET N-CHANNEL

Manufacturer: International Rectifier (now Infineon)

📥 Download Datasheet

Overview

PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRF150 JANTX2N6764 THRU-HOLE (TO-204AA/AE) JANTXV2N6764 [REF:MIL-PRF-19500/543] Product Summary 100V, N-CHANNEL Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

Key Features

  • n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Reco.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
JANTX2N6764 TRANSISTORS N-CHANNEL
JANTX2N6760 POWER MOSFET N-CHANNEL
JANTX2N6760 TRANSISTORS N-CHANNEL
JANTX2N6762 POWER MOSFET N-CHANNEL
JANTX2N6762 TRANSISTORS N-CHANNEL
JANTX2N6766 POWER MOSFET N-CHANNEL
JANTX2N6768 POWER MOSFET N-CHANNEL
JANTX2N6768 TRANSISTORS N-CHANNEL
JANTX2N6756 N-Channel Transistor
JANTX2N6758 N-CHANNEL TRANSISTORS