Datasheet4U Logo Datasheet4U.com

JANTX2N6786 - POWER MOSFET N-CHANNEL

Features

  • n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n ESD Rating: Class 1A per MIL-STD-750, Method 1020 Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avala.

📥 Download Datasheet

Datasheet preview – JANTX2N6786

📁 Similar Datasheet

  • JANTX2N2060 - UNITIZED DUAL NPN SILICON TRANSISTOR (Microsemi)
  • JANTX2N2060L - UNITIZED DUAL NPN SILICON TRANSISTOR (Microsemi)
  • JANTX2N2221A - NPN SILICON SWITCHING TRANSISTOR (Microsemi)
  • JANTX2N2222A - NPN SILICON SWITCHING TRANSISTOR (Microsemi Corporation)
  • JANTX2N2323 - SCRs 1.6 Amp/ Planear (Microsemi Corporation)
  • JANTX2N2323AS - SCRs 1.6 Amp/ Planear (Microsemi Corporation)
  • JANTX2N2323S - SCRs 1.6 Amp/ Planear (Microsemi Corporation)
  • JANTX2N2324AS - SCRs 1.6 Amp/ Planear (Microsemi Corporation)
  • JANTX2N2324S - SCRs 1.6 Amp/ Planear (Microsemi Corporation)
  • JANTX2N2326AS - SCRs 1.6 Amp/ Planear (Microsemi Corporation)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD-90425D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE-TO-205AF (TO-39) Product Summary Part Number BVDSS RDS(on) IRFF310 400V 3.6Ω ID 1.25A IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.
Published: |