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JANTX2N6806 - P-CHANNNEL TRANSISTORS

Features

  • n RepetitiveAvalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings ID @ VGS = 0V, TC = 25°C ID @ VGS = 0V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanch.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
JANTX2N6806 P-CHANNNEL TRANSISTORS
JANTX2N6800 POWER MOSFET
JANTX2N6802 POWER MOSFET
JANTX2N6804 P-Channel Power MOSFET
JANTX2N6845 POWER MOSFET

Full PDF Text Transcription

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PD-90548D IRF9230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS JANTX2N6806 JANTXV2N6806 THRU-HOLE -TO-204AE (TO-3) REF:MIL-PRF-19500/562 200V, P-CHANNNEL Product Summary Part Number BVDSS IRF9230 -200V RDS(on) 0.80 Ω ID -6.5A The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.
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