JANTXV2N6760 Overview
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance bined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
| Part number | JANTXV2N6760 |
|---|---|
| Datasheet | JANTXV2N6760_InternationalRectifier.pdf |
| File Size | 146.65 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.00ohm/ Id=5.5A) |
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The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance bined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| JANTXV2N6760 | TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=1.00ohm/ Id=5.5A) |
| JANTXV2N6762 | TRANSISTORS N-CHANNEL(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A) |
| JANTXV2N6762 | POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=4.5A) |
| JANTXV2N6764 | TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.055ohm/ Id= 38A) |
| JANTXV2N6764 | POWER MOSFET N-CHANNEL(BVdss=100V/ Rds(on)=0.055ohm/ Id=38A) |
| JANTXV2N6766 | POWER MOSFET N-CHANNEL |
| JANTXV2N6768 | TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.300ohm/ Id=14A) |
| JANTXV2N6768 | POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=0.300ohm/ Id=14A) |
| JANTXV2N6756 | N-Channel Transistor |
| JANTXV2N6758 | N-CHANNEL TRANSISTORS |