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JANTXV2N6786 Datasheet Power MOSFET N-channel

Manufacturer: International Rectifier (now Infineon)

Overview: PD-90425D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE-TO-205AF (TO-39) Product Summary Part Number BVDSS RDS(on) IRFF310 400V 3.6Ω ID 1.25A IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400V, N-CHANNEL The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resistance bined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Key Features

  • n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling n ESD Rating: Class 1A per MIL-STD-750, Method 1020 Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avala.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
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JANTXV2N6760 TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=1.00ohm/ Id=5.5A)
JANTXV2N6760 POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.00ohm/ Id=5.5A)
JANTXV2N6762 TRANSISTORS N-CHANNEL(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
JANTXV2N6762 POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
JANTXV2N6764 TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.055ohm/ Id= 38A)

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