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JANTXV2N6806 Datasheet P-channel MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRF9130 -100V RDS(on)  ID -11A PD- 90549E IRF9130 JANTX2N6804 JANTXV2N68064 100V, P-CHANNEL REF:.

General Description

HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance;

superior reverse energy and diode recovery dv/dt capability.

Key Features

  • Repetitive Avalanche Ratings.
  • Dynamic dv/dt Rating.
  • Hermetically Sealed.
  • Simple Drive Requirements.
  • ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Aval.

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More Datasheets from International Rectifier (now Infineon)

Part Number Description
JANTXV2N6800 POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.0ohm/ Id=3.0A)
JANTXV2N6802 POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=2.5A)
JANTXV2N6804 TRANSISTORS P-CHANNEL(Vdss=-100V/ Rds(on)=0.30ohm/ Id=-11A)
JANTXV2N6804 POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-11A)
JANTXV2N6845 POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.60ohm/ Id=-4.0A)
JANTXV2N6847 POWER MOSFET P-CHANNEL(BVdss=-200V/ Rds(on)=1.5ohm/ Id=-2.5A)
JANTXV2N6849 P-Channel MOSFET
JANTXV2N6849U 100V P-CHANNEL MOSFET
JANTXV2N6851 POWER MOSFET P-CHANNEL(BVdss=-200V/ Rds(on)=0.80ohm/ Id=-4.0A)
JANTXV2N6756 N-Channel Transistor