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JANTXV2N6847 - POWER MOSFET P-CHANNEL(BVdss=-200V/ Rds(on)=1.5ohm/ Id=-2.5A)

Features

  • s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter I D @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Lead Temperature Weight JANTX2N6.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
JANTXV2N6845 POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.60ohm/ Id=-4.0A)
JANTXV2N6849 P-Channel MOSFET
JANTXV2N6849U 100V P-CHANNEL MOSFET
JANTXV2N6800 POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.0ohm/ Id=3.0A)
JANTXV2N6802 POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=2.5A)

Full PDF Text Transcription

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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.553B HEXFET ® JANTX2N6847 POWER MOSFET JANTXV2N6847 [REF:MIL-PRF-19500/563] [GENERIC:IRFF9220] P-CHANNEL Product Summary Part Number JANTX2N6847 JANTXV2N6847 BVDSS -200V RDS(on) 1.5Ω ID -2.5A -200 Volt, 1.5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
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