Overview: PD - 91394E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number IRHM7460SE
.. IRHM7460SE JANSR2N7392 500V N-CHANNEL REF: MIL-PRF-19500/661
RAD Hard HEXFET TECHNOLOGY
® Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 18A QPL Part Number JANSR2N7392 International Rectifiers RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.