Forward Voltage Drop Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (min, max) 0.99V min,1.31V max 1200V min 30µA max Test Conditions IF = 10A, TJ = 25°C TJ = 25°C, IR = 500µA TJ = 25°C, VR = 1200V
Mechanical Data
Nominal Backmetal Composition, (Thickness) Nominal Front Metal Composit
Full PDF Text Transcription for HF70D120ACE (Reference)
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HF70D120ACE Features GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benchmark Efficiency for Motor Control Applications Rugged Tra...
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ecovery Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation PD - 93878 Hexfred Die in Wafer Form 1200V IF(nom)=75A VF(typ)= 1.75V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer Benefits Electrical Characteristics (Wafer Form) Parameter VF BVR IRM Description Forward Voltage Drop Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (min, max) 0.99V min,1.