20MT120UF Overview
D 02/03 20MT120UF "FULL-BRIDGE" IGBT MTP.
20MT120UF Key Features
- Positive VCE(ON)Temperature Coefficient
- 10µs Short Circuit Capability
- HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
- Low Diode VF
- Square RBSOA
- Aluminum Nitride DBC
- Very Low Stray Inductance Design for High Speed Operation
- UL approved (File E78996)
- UltraFast Non Punch Through (NPT)
20MT120UF Applications
- Rugged with UltraFast Performance