Datasheet Summary
5/
I27124 rev. D 02/03
"FULL-BRIDGE" IGBT MTP
Features
Technology
- Positive VCE(ON)Temperature Coefficient
- 10µs Short Circuit Capability
- HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
- Low Diode VF
- Square RBSOA
- Aluminum Nitride DBC
- Very Low Stray Inductance Design for High Speed Operation
- UL approved (File E78996)
- UltraFast Non Punch Through (NPT)
UltraFast NPT IGBT
VCES = 1200V IC = 40A T C = 25°C
Benefits
Applications
- Rugged with UltraFast Performance
- Benchmark Efficiency above 20KHz
- Outstanding ZVS and Hard Switching Operation
- Low EMI, requires Less Snubbing
- Excellent Current Sharing in Parallel Operation
- Direct Mounting to...