Datasheet Summary
Target Data 05/01
"FULL-BRIDGE" IGBT MTP Warp Speed IGBT
Features
- Gen. 4 Warp Speed IGBT Technology
- HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
- Very Low Conduction and Switching Losses
- Optional SMT Thermystor Inside
- Aluminum Nitride DBC
- Very Low Stray Inductance Design for High Speed Operation
VCES = 600V VCE(on) typ. = 2.2V @ VGE = 15V, IC = 25A TC = 25°C
Benefits
- Optimized for Welding, UPS and SMPS Applications
- Operating Frequencies > 20 kHz Hard Switching, >200 kHz Resonant Mode
- Low EMI, requires Less Snubbing
- Direct Mounting to Heatsink
- PCB Solderable Terminals
- Very Low Junction-to-Case Thermal...