AUIRFS3107
Overview
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
- HEXFET® Power MOSFET G S
- VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
- 75V 2.5m: 3.0m: 230A 195A c
