IRFB3407ZPbF Description
IRFB3407ZPbF Applications HEXFET® Power MOSFET l Battery Management l High Speed Power Switching D VDSS RDS(on) typ. 75V 5.0mΩ l Hard Switched and High Frequency Circuits G max. 0.65 62 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 .irf.
IRFB3407ZPbF Key Features
- Battery Management
- High Speed Power Switching D VDSS RDS(on) typ. 75V 5.0mΩ
- Hard Switched and High Frequency Circuits G max. ID (Silicon Limited) c 6.4mΩ 122A Benefits S ID (Package
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
- Lead-Free S D G TO-220AB IRFB3407ZPbF G Gate D Drain S Source Ordering Information Base part number IRFB