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IRFB4137PBF Description

Application  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply High Speed Power Switching  Hard Switched and High Frequency Circuits G D S IRFB4137PbF HEXFET® Power MOSFET VDSS RDS(on) typ. 0.44 62 mJ Units °C/W 1 .irf. © 2012 International Rectifier October 30, 2012 IRFB4137PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.