Datasheet4U Logo Datasheet4U.com

CA3141 - High-Voltage Diode Array

General Description

The CA3141E High Voltage Diode Array Consists of ten general purpose high reverse breakdown diodes.

Six diodes are internally connected to form three common cathode diode pairs, and the remaining four diodes are internally connected to form two common anode diode pairs.

Key Features

  • Matched Monolithic Construction - VF Match (Each Diode Pair) . . . . 0.55mV At IF = 1mA.
  • Low Diode Capacitance.
  • . . 0.3pF (Typ) at VR = 2V.
  • High Diode-to-Substrate Breakdown.
  • . . . . 30V (Min).
  • Low Reverse (Leakage) Current.
  • . . 100nA (Max).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CA3140 BiMOS Operational Amplifier Renesas
CA3140 4.5MHz / BiMOS Operational Amplifier Intersil
CA3140 BiMOS Operational Amplifier Harris
CA3140A BiMOS Operational Amplifier Renesas
CA3140A 4.5MHz / BiMOS Operational Amplifier Intersil

Other Datasheets by Intersil (now Renesas)

Part Number Description
CA3146 High-Voltage Transistor Arrays
CA3146A High-Voltage Transistor Arrays
CA3102 Dual High Frequency Differential Amplifier
CA3183 High-Voltage Transistor Arrays
CA3183A High-Voltage Transistor Arrays

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Semiconductor January 1999 CT T ODU CEMEN 7 R P E A 74 T L 7 E OL REP 00-442OBS ENDED 8 1 m s.co MM ions ECO pplicat p@harri R O N ral A centap High-Voltage Diode Array For Cent : Call or email Industrial and Military CA3141 Commercial, Applications Features • Matched Monolithic Construction - VF Match (Each Diode Pair) . . . . 0.55mV At IF = 1mA • Low Diode Capacitance. . . . . . . 0.3pF (Typ) at VR = 2V • High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min) • Low Reverse (Leakage) Current . . . . . . . 100nA (Max) Description The CA3141E High Voltage Diode Array Consists of ten general purpose high reverse breakdown diodes.