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CTS20MS - Radiation Hardened Dual 4-Input NAND Gate

Datasheet Summary

Description

The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate.

A low on any input forces the output to a High state.

The HCTS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Features

  • 3 Micron Radiation Hardened SOS CMOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ).
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
  • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse.
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: -55 oC to +125oC GND 7.
  • Significant Power Reduction Compared to LSTTL ICs.

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Datasheet preview – CTS20MS

Datasheet Details

Part number CTS20MS
Manufacturer Intersil Corporation
File Size 132.27 KB
Description Radiation Hardened Dual 4-Input NAND Gate
Datasheet download datasheet CTS20MS Datasheet
Additional preview pages of the CTS20MS datasheet.

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Full PDF Text Transcription

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HCTS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-183S CDIP2-T14 TOP VIEW A1 1 B1 2 NC 3 C1 4 D1 5 Y1 6 14 VCC 13 D2 12 C2 11 NC 10 B2 9 A2 8 Y2 Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Latch-Up Free Under Any Conditions • Military Temperature Range: -55 oC to +125oC GND 7 • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • LSTTL Input Compatibility - VIL = 0.
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