D7N60C3S Datasheet | Intersil

features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Features - 14A, 600V at TC = 25o C - 600V Switching SOA Capability - Typical Fall Time- - - . 140ns at TJ = 150o C - Short Circuit Rating - Low Conduction Loss Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE .. Formerly Developmental Type TA49115. Ordering Information PART NUMBER HGTD7N60C3S HGTP7N60C3 PACKAGE TO-252AA TO-220AB BRAND G7N60C COLLECTOR (FLANGE) JEDEC TO-252AA G7N60C3 COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. HGTD7N60C3S9A. GATE EMITTER Symbol INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTD7N60C3S, HGTP7N60C3 Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified HGTD7N60C3S HGTP7N60C3 Collector to Emitter Voltage - - - - - - - - - - BVCES Collector...