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D7N60C3S - HGTD7N60C3S

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Intersil Corporation

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D7N60C3S HGTD7N60C3S by Intersil Corporation - Datasheet Preview — Datasheet preview – D7N60C3S

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Part number	D7N60C3S
Manufacturer	Intersil Corporation
File Size	176.94 KB
Description	HGTD7N60C3S
Datasheet	D7N60C3S Datasheet
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Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

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Published: Oct 5, 2008 |