DG444
feature lower analog ON resistance (<85Ω) and faster switch time (t ON <250ns) pared to the DG211 and DG212. Charge injection has been reduced, simplifying sample and hold applications. The improvements in the DG444 series are made possible by using a high voltage silicon-gate process. An epitaxial layer prevents the latch-up associated with older CMOS technologies. The 44V maximum voltage range permits controlling ±20V signals when operating with ±20V power supplies. The four switches are bilateral, equally matched for AC or bidirectional signals. The ON resistance variation with analog signals is quite low over a ±5V analog input range. The switches in the DG444 and DG445 are identical, differing only in the polarity of the selection logic.
Features
- ON Resistance (Max)
- -
- -
- 85Ω
- Low Power Consumption (PD)
- -
- . <35µW
- Fast Switching Action
- t ON (Max)
- -
- -
- . . . ....
