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EL5132 - 670MHz Low Noise Amplifiers

General Description

CONDITIONS MIN TYP MAX UNIT VOS TCVOS IB IOS TCIOS Offset Voltage Offset Voltage Temperature Coefficient Input Bias Current Input Offset Current Input Bias Current Temperature Coefficient Measured from TMIN to TMAX VIN = 0V VIN = 0V Measured from TMIN to TMAX -1 0.5 1 mV 0.8 µV/°C 8 12 20 µA -

Key Features

  • 670MHz -3dB bandwidth.
  • Ultra low noise 0.9nV/√Hz.
  • 1000V/µs slew rate.
  • Low supply current = 12mA.
  • Single supplies from 5V to 12V.
  • Dual supplies from ±2.5V to ±6V.
  • Fast disable on the EL5132.
  • Pb-free plus anneal available (RoHS compliant).

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Other Datasheets by Intersil (now Renesas)

Part Number Description
EL5130 300MHz Low Noise Amplifiers
EL5131 300MHz Low Noise Amplifiers
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EL5134 Low Noise Amplifiers
EL5135 Low Noise Amplifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® Data Sheet EL5132, EL5133 May 4, 2007 FN7382.8 670MHz Low Noise Amplifiers The EL5132 and EL5133 are ultra-low voltage noise, high speed voltage feedback amplifiers that are ideal for applications requiring low voltage noise, including communications and imaging. These devices offer extremely low power consumption for exceptional noise performance. Stable at gains as low as 10, these devices offer 120mA of drive performance. Not only do these devices find perfect application in high gain applications, they maintain their performance down to lower gain settings. These amplifiers are available in small package options (SOT-23) as well as the industry-standard SOIC packages. All parts are specified for operation over the -40°C to +85°C temperature range.