F9232 Datasheet | Intersil

Description These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly Developmental type TA17512. Features - -5.5A and -6.5A, -150V and -200V - r DS(ON) = 0.8Ω and 1.2Ω - Single Pulse Avalanche Energy Rated - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Related Literature - TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards” Symbol Ordering Information PART NUMBER IRF9230 IRF9231 IRF9232 IRF9233 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF9230 IRF9231 IRF9232 IRF9233 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 6-1 IRF9230, IRF9231, IRF9232, IRF9233 .. Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified IRF9230 -200 -200 -6.5 -4.0 -26 ±20 75 0.6 500 -55 to 150 300 260 IRF9231 -150 -150 -6.5 -4.0 -26 ±20 75 0.6 500 -55 to 150 300 260 IRF9232 -200 -200 -5.5 -3.5 -22 ±20 75 0.6 500 -55 to 150 300 260 IRF9233 -150 -150 -5.5 -3.5 -22 ±20 75 0.6 500 -55 to 150 300 260 UNITS V V A A A V W W/o C m J o C o C o C Drain to Source Breakdown Voltage (Note 1)- - . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) - VDGRVGS Continuous Drain Current- - - - - . . ....