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FSGYC260R

Manufacturer: Intersil (now Renesas)

FSGYC260R datasheet by Intersil (now Renesas).

FSGYC260R datasheet preview

FSGYC260R Datasheet Details

Part number FSGYC260R
Datasheet FSGYC260R_IntersilCorporation.pdf
File Size 82.14 KB
Manufacturer Intersil (now Renesas)
Description N-Channel Power MOSFET
FSGYC260R page 2 FSGYC260R page 3

FSGYC260R Overview

FSGYC260R TM Data Sheet May 2000 File Number 4851.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star Power Rad Hard MOSFETs have been specifically developed for high performance applications in a mercial or military space environment. Star Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star Power Gold...

FSGYC260R Key Features

  • 56A, 200V, rDS(ON) = 0.033Ω
  • UIS Rated
  • Total Dose
  • Meets Pre-RAD Specifications to 100K RAD (Si)
  • Single Event
  • Safe Operating Area Curve for Single Event Effects
  • SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias
  • Dose Rate
  • Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
  • Typically Survives 2E12 if Current Limited to IAS
Intersil (now Renesas) logo - Manufacturer

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FSGYC260R Distributor

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