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FSL230D Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: FSL230D, FSL230R June 1998 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power.

General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for mercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is bined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

Key Features

  • 5A, 200V, rDS(ON) = 0.460Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 3.0nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Spec.

More Datasheets from Intersil (now Renesas)

Part Number Description
FSL230R N-Channel Power MOSFET
FSL234D N-Channel Power MOSFET
FSL234R N-Channel Power MOSFET
FSL23A0D N-Channel Power MOSFET
FSL23A0R N-Channel Power MOSFET
FSL23A4D N-Channel Power MOSFET
FSL23A4R N-Channel Power MOSFET
FSL214D Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSL214R Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSL110D N-Channel Power MOSFET

FSL230D Distributor