FSPYC260F4 Overview
FSPYC260R, FSPYC260F TM Data Sheet May 2000 File Number 4850.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star Power Rad Hard MOSFETs have been specifically developed for high performance applications in a mercial or military space environment. Star Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star...
FSPYC260F4 Key Features
- 58A, 200V, rDS(ON) = 0.031Ω
- UIS Rated
- Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
- Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias
- Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS