FSPYE234D1
FSPYE234D1 is N-Channel Power MOSFET manufactured by Intersil.
Features
- 9A, 250V, r DS(ON) = 0.215Ω
- UIS Rated
- Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
- Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36Me V/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias
- Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IAS
- Photo Current
- 4.0n A Per-RAD (Si)/s Typically
- Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Symbol
Packaging
SMD.5
Ordering Information
RAD LEVEL 10K 100K 100K 300K 300K SCREENING LEVEL PART NUMBER/BRAND Engineering samples FSPYE234D1 TXV Space TXV Space FSPYE234R3 FSPYE234R4 FSPYE234F3 FSPYE234F4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
FSPYE234R, FSPYE234F
Absolute Maximum Ratings
TC = 25o C, Unless Otherwise Specified FSPYE234R,...
