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FSS130D Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: FSS130D, FSS130R June 1998 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power.

General Description

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for mercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is bined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

Key Features

  • 11A, 100V, rDS(ON) = 0.210Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 1.5nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Spe.

More Datasheets from Intersil (now Renesas)

Part Number Description
FSS130R N-Channel Power MOSFET
FSS13A0D N-Channel Power MOSFETs
FSS13A0R N-Channel Power MOSFETs
FSS230D 8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
FSS230R N-Channel Power MOSFETs
FSS234D N-Channel Power MOSFETs
FSS234R 6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
FSS23A0D N-Channel Power MOSFETs
FSS23A0R 9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSS23A4D 7A/ 250V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

FSS130D Distributor