Datasheet4U Logo Datasheet4U.com

FSS234D - N-Channel Power MOSFETs

Datasheet Summary

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Features

  • 6A, 250V, rDS(ON) = 0.600Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 4.0nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Spec.

📥 Download Datasheet

Datasheet preview – FSS234D

Datasheet Details

Part number FSS234D
Manufacturer Intersil Corporation
File Size 42.67 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet FSS234D Datasheet
Additional preview pages of the FSS234D datasheet.

📁 Similar Datasheet

  • FSS234 - N-Channel Silicon MOSFET (Sanyo)
  • FSS232 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • FSS238 - Load Switching Applications (Sanyo Semicon Device)
  • FSS207 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
  • FSS212 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • FSS216 - DC/DC Converter Applications (Sanyo Semicon Device)
  • FSS242 - DC/DC Converter Applications (Sanyo Semicon Device)
  • FSS244 - DC / DC Converter Applications (Sanyo Semicon Device)
  • FSS250 - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • FSS264 - N-Channel Silicon MOSFET (Sanyo)
Other Datasheets by Intersil Corporation
  • FSS234R - 6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
  • FSS230D - 8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
  • FSS230R - N-Channel Power MOSFETs
  • FSS23A0D - N-Channel Power MOSFETs
  • FSS23A0R - 9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
  • FSS23A4D - 7A/ 250V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
  • FSS23A4R - N-Channel Power MOSFETs
  • FSS130D - N-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
FSS234D, FSS234R June 1998 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features • 6A, 250V, rDS(ON) = 0.600Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 4.
Published: |