FSS9130D - P-Channel Power MOSFET

Product Overview

Intersil Corporation

Datasheet Details

Part number	FSS9130D
Manufacturer	Intersil Corporation
File Size	44.98 KB
Description	P-Channel Power MOSFET
Datasheet	FSS9130D Datasheet
Additional preview pages of the FSS9130D datasheet.

Product details

Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Features

6A, -100V, rDS(ON) = 0.660Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 1.5nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spe.

📁 Similar Datasheet

FSS101 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
FSS104 - DC/DC Converter Applications (Sanyo Semicon Device)
FSS106 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
FSS107 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
FSS131 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
FSS132 - Load Switching Applications (Sanyo Semicon Device)
FSS133 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
FSS134 - DC/DC Converter Applications (Sanyo Semicon Device)

Other Datasheets by Intersil Corporation

FSS9130R - P-Channel Power MOSFETs
FSS913A0D - 10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
FSS913A0R - 10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
FSS9230D - P-Channel Power MOSFETs
FSS9230R - P-Channel Power MOSFETs
FSS923A0D - P-Channel Power MOSFETs

Published: Mar 23, 2005 |