FSTJ9055R1 Overview
FSTJ9055D, FSTJ9055R TM Data Sheet June 2000 File Number 4756.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for mercial and military space applications. Immunity to Single Event Effects (SEE) is bined with 100K RADs of total dose hardness to provide devices which are ideally suited to...
FSTJ9055R1 Key Features
- 62A, -60V, rDS(ON) = 0.023Ω
- Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
- Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
- Photo Current