FSTYC9055R Overview
FSTYC9055D, FSTYC9055R TM Data Sheet June 2000 File Number 4755.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for mercial and military space applications. Immunity to Single Event Effects (SEE) is bined with 100K RADs of total dose hardness to provide devices which are ideally suited...
FSTYC9055R Key Features
- 64A, -60V, rDS(ON) = 0.023Ω
- Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Typical SEE Immunity
- LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 0V
- LET of 26MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 5V Off-Bias
- Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
- Photo Current