FSYA450D
FSYA450D is Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs manufactured by Intersil.
Features
- 11A, 500V, r DS(ON) = 0.530Ω
- Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36Me V/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
- Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
- Photo Current
- 30n A Per-RAD(Si)/s Typically
- Neutron
- Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2
- Usable to 3E13 Neutrons/cm2
Symbol
Packaging
SMD-1 PART NUMBER/BRAND FSYA450D1 FSYA450D3 FSYA450R1 FSYA450R3 FSYA450R4
Ordering Information
RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL mercial TXV mercial TXV Space
4-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. .intersil. or 407-727-9207 | Copyright © Intersil Corporation 1999
FSYA450D, FSYA450R
Absolute Maximum Ratings
TC = 25o C, Unless Otherwise Specified FSYA450D, FSYA450R 500 500 11 7 33 ±20 150 60 1.20 33 11 33 -55 to 150 300 UNITS V V A A A V W W W/ o C A A A o C o C
Drain to Source Voltage
- -
- -
- -
- -
- -
- VDS Drain to Gate Voltage (RGS = 20kΩ)
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- -
- -
- - . . . . VDGR Continuous Drain Current TC = 25o C
- - . . ....