• Part: FSYA450D
  • Description: Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
  • Category: MOSFET
  • Manufacturer: Intersil
  • Size: 56.34 KB
Download FSYA450D Datasheet PDF
Intersil
FSYA450D
FSYA450D is Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs manufactured by Intersil.
Features - 11A, 500V, r DS(ON) = 0.530Ω - Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36Me V/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias - Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM - Photo Current - 30n A Per-RAD(Si)/s Typically - Neutron - Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2 - Usable to 3E13 Neutrons/cm2 Symbol Packaging SMD-1 PART NUMBER/BRAND FSYA450D1 FSYA450D3 FSYA450R1 FSYA450R3 FSYA450R4 Ordering Information RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL mercial TXV mercial TXV Space 4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. .intersil. or 407-727-9207 | Copyright © Intersil Corporation 1999 FSYA450D, FSYA450R Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified FSYA450D, FSYA450R 500 500 11 7 33 ±20 150 60 1.20 33 11 33 -55 to 150 300 UNITS V V A A A V W W W/ o C A A A o C o C Drain to Source Voltage - - - - - - - - - - - VDS Drain to Gate Voltage (RGS = 20kΩ) - - - - - - - - . . . . VDGR Continuous Drain Current TC = 25o C - - . . ....