FSYC264D - Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Datasheet Summary

Description

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications.

Features

34A, 250V, rDS(ON) = 0.080Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 21nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Spec.

Intersil Corporation

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Datasheet Details

Part number	FSYC264D
Manufacturer	Intersil Corporation
File Size	48.27 KB
Description	Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Datasheet	FSYC264D Datasheet
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FSYC264D, FSYC264R July 1998 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacriﬁced. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.

Published: Mar 23, 2005 |