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FSYE430R - Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Features

  • 9A, -100V, rDS(ON) = 0.280Ω.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
  • Photo Current - 1.5nA Per-RAD(Si)/s Typically.
  • Neutron - Maintain Pre-RAD Spe.

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📁 Similar Datasheet

Part Number Description Manufacturer
FSYA450R N-Channel Power MOSFETs Intersil

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Full PDF Text Transcription

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FSYE913A0D, FSYE913A0R Data Sheet February 2000 File Number 4744 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
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