HAF70009 Overview
HAF70009 Data Sheet August 1999 File Number 4770 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very...
HAF70009 Key Features
- 56A, 100V
- Simulation Models
- Temperature pensated PSPICE® and SABER© Electrical Models
- Spice and Saber Thermal Impedance Models
- intersil
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”