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HCS240MS - Radiation Hardened Octal Buffer/Line Driver

General Description

The Intersil HCS240MS is a Radiation Hardened Inverting Octal Buffer/Line Driver, Three-State, with two active-low output enables.

The HCS240MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

Key Features

  • 3 Micron Radiation Hardened CMOS SOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ).
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
  • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse.
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: -55oC to +125oC.
  • Significant Power Reduction Compared to LSTTL ICs.
  • DC Oper.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
HCS241MS Radiation Hardened Inverting Octal Three-State Buffer/Line Driver
HCS244MS Radiation Hardened Octal Buffer/Line Driver/ Three-State
HCS244T Radiation Hardened Octal Buffer/Line Driver/ Three-State
HCS245MS Radiation Hardened Octal Bus Transceiver/ Three-State/ Non-Inverting
HCS20MS Radiation Hardened Dual 4-Input NAND Gate

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET HCS240MS Radiation Hardened Octal Buffer/Line Driver, Three-State FN3562 Rev 1.00 September 1995 Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Latch-Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.