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HCTS245MS - Radiation Hardened Octal Bus Transceiver

General Description

The Intersil HCTS245MS is a Radiation Hardened NonInverting Octal Bidirectional Bus Transceiver, Three-State, intended for two-way asynchronous communication between data busses.

The HCTS245MS allows data transmission from the A bus to the B bus or from the B bus to the A bus.

Key Features

  • 3 Micron Radiation Hardened CMOS SOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ).
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
  • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse.
  • Latch-Up Free Under Any Conditions.
  • Fanout (Over Temperature Range) - Bus Driver Outputs - 15 LSTTL Loads.
  • Military Temperature Range: -55 oC to +.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
HCTS245T Radiation Hardened Octal Bus Transceiver/ Three-State/ Non-Inverting
HCTS240AMS Radiation Hardened Octal Buffer/Line Driver/ Three-State
HCTS244MS Radiation Hardened Octal Buffer/Line Driver
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HCTS21MS Radiation Hardened Dual 4-Input AND Gate

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HCTS245MS September 1995 Radiation Hardened Octal Bus Transceiver, Three-State, Non-Inverting Pinouts 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20 TOP VIEW DIR A0 A1 A2 A3 A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 20 VCC 19 OE 18 B0 17 B1 16 B2 15 B3 14 B4 13 B5 12 B6 11 B7 Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Latch-Up Free Under Any Conditions • Fanout (Over Temperature Range) - Bus Driver Outputs - 15 LSTTL Loads • Military Temperature Range: -55 oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC O