Datasheet4U Logo Datasheet4U.com

HCTS273MS - Radiation Hardened Octal D Flip-Flop

General Description

The Intersil HCTS273MS is a Radiation Hardened octal D flipflop, positive edge triggered, with reset.

The HCTS273MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

Key Features

  • 3 Micron Radiation Hardened CMOS SOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ).
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
  • Dose Rate Upset >1010 RAD (Si)/s. 20ns Pulse.
  • Latch-Up Free Under Any Conditions.
  • Fanout (Over Temperature Range) - Bus Driver Outputs - 15 LSTTL Loads.
  • Military Temperature Range: -55oC to +125o.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HCTS20MS Radiation Hardened Dual 4-Input NAND Gate Intersil
HCTS164MS 8-Bit Serial-In/Parallel-Out Shift Register Intersil
HCTS191MS Synchronous 4-Bit Up/Down Counter Intersil
HCTSM80101AAL High Clearance and Creepage Distance Transformers BOURNS
HCTSM80102AAL High Clearance and Creepage Distance Transformers BOURNS

Other Datasheets by Intersil (now Renesas)

Part Number Description
HCTS27MS Radiation Hardened Triple 3-Input NOR Gate
HCTS21MS Radiation Hardened Dual 4-Input AND Gate
HCTS240AMS Radiation Hardened Octal Buffer/Line Driver/ Three-State
HCTS244MS Radiation Hardened Octal Buffer/Line Driver
HCTS244T Radiation Hardened Octal Buffer/Line Driver/ Three-State

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HCTS273MS September 1995 Radiation Hardened Octal D Flip-Flop Pinouts 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20, LEAD FINISH C TOP VIEW MR Q0 D0 D1 Q1 Q2 D2 D3 Q3 1 2 3 4 5 6 7 8 9 20 VCC 19 Q7 18 D7 17 D6 16 Q6 15 Q5 14 D5 13 D4 12 Q4 11 CP Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s.