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HGT1S15N120C3 Datasheet N-channel IGBT

Manufacturer: Intersil (now Renesas)

Overview: HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S June 1997 35A, 1200V, UFS Series N-Channel.

General Description

The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best

Key Features

  • of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

HGT1S15N120C3 Distributor

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