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HGT1S7N60B3DS Datasheet 14a 600v Ufs Series N-channel IGBT

Manufacturer: Intersil (now Renesas)

Overview: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 File Number 4413.

HGT1S7N60B3DS datasheet preview

Datasheet Details

Part number	HGT1S7N60B3DS
Manufacturer	Intersil (now Renesas)
File Size	94.32 KB
Description	14A 600V UFS Series N-Channel IGBT
Datasheet	HGT1S7N60B3DS_IntersilCorporation.pdf

Key Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057). The IGBT is ideal for many high voltage switching.

Similar Datasheet

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