HGT5A40N60A4D Datasheet | Intersil

HGT5A40N60A4D Data Sheet February 2000 File Number 4783.1 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT5A40N60A4D is a MOS gated high voltage switching device bining the best Features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49347. The diode used in anti-parallel is the development type 49374. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49349. Features - 100kHz Operation at 390V, 40A - 200kHz Operation at 390V, 20A - 600V Switching SOA Capability - Typical Fall Time- - - . . . 55ns at TJ = 125o - Low Conduction Loss Packaging JEDEC STYLE STRETCH TO-247 E C G Ordering Information PART NUMBER HGT5A40N60A4D PACKAGE TO-247-ST BRAND 40N60A4D COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 2-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD...