HGTA32N60E2 Overview
The IGBT is a MOS gated high voltage switching device bining the best.
HGTA32N60E2 Key Features
- 32A, 600V
- Latch Free Operation
- Typical Fall Time 620ns
- High Input Impedance
- Low Conduction Loss
HGTA32N60E2 datasheet by Intersil (now Renesas).
| Part number | HGTA32N60E2 |
|---|---|
| Datasheet | HGTA32N60E2_IntersilCorporation.pdf |
| File Size | 31.92 KB |
| Manufacturer | Intersil (now Renesas) |
| Description | 32A/ 600V N-Channel IGBT |
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The IGBT is a MOS gated high voltage switching device bining the best.
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