HGTA32N60E2 Datasheet | Intersil

HGTA32N60E2 April 1995 32A, 600V N-Channel IGBT Package JEDEC MO-093AA (5 LEAD TO-218) 5 EMITTER COLLECTOR (FLANGE) 4 EMITTER KELVIN 3 COLLECTOR 2 NO CONNECTION 1 GATE Features - 32A, 600V - Latch Free Operation - Typical Fall Time 620ns - High Input Impedance - Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTA32N60E2 PACKAGE TO-218 BRAND GA32N60E2 Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G EMITTER KELVIN E NOTE: When ordering, use the entire part...