HGTD1N120BNS - 5.3A/ 1200V/ NPT Series N-Channel IGBT
Intersil (now Renesas)
Key Features
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching.
Full PDF Text Transcription for HGTD1N120BNS (Reference)
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HGTD1N120BNS, HGTP1N120BN Data Sheet January 2000 File Number 4649.2 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) I...
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el IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49316. Features • 5.
HGTD1N120BNS Datasheet
