Datasheet Details
| Part number | HGTD6N50E1S |
|---|---|
| Manufacturer | Intersil (now Renesas) |
| File Size | 32.55 KB |
| Description | 6A/ 400V and 500V N-Channel IGBTs |
| Datasheet | HGTD6N50E1S_IntersilCorporation.pdf |
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Overview: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S March 1997 6A, 400V and 500V N-Channel IGBTs Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR.
| Part number | HGTD6N50E1S |
|---|---|
| Manufacturer | Intersil (now Renesas) |
| File Size | 32.55 KB |
| Description | 6A/ 400V and 500V N-Channel IGBTs |
| Datasheet | HGTD6N50E1S_IntersilCorporation.pdf |
|
|
|
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers.
These types can be operated directly from low power integrated circuits.
PACKAGING AVAILABILITY PART NUMBER HGTD6N40E1 HGTD6N50E1 HGTD6N40E1S HGTD6N50E1S PACKAGE TO-251AA TO-251AA TO-252AA TO-252AA BRAND G6N40E G6N50E G6N40E G6N50E E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number.
| Part Number | Description |
|---|---|
| HGTD6N50E1 | 6A/ 400V and 500V N-Channel IGBTs |
| HGTD6N40E1 | 6A/ 400V and 500V N-Channel IGBTs |
| HGTD6N40E1S | 6A/ 400V and 500V N-Channel IGBTs |
| HGTD10N40F1 | 10A/ 400V and 500V N-Channel IGBTs |
| HGTD10N40F1S | 10A/ 400V and 500V N-Channel IGBTs |
| HGTD10N50F1 | 10A/ 400V and 500V N-Channel IGBTs |
| HGTD10N50F1S | 10A/ 400V and 500V N-Channel IGBTs |
| HGTD1N120BNS | 5.3A/ 1200V/ NPT Series N-Channel IGBT |
| HGTD1N120CNS | 6.2A/ 1200V/ NPT Series N-Channel IGBT |
| HGTD2N120BNS | 12A/ 1200V/ NPT Series N-Channel IGBT |