HGTD6N50E1S Overview
Key Specifications
Max Operating Temp: 150 °C
Description
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.
Key Features
- 6A, 400V and 500V
- VCE(ON): 2.5V Max
- TFALL: 1.0µs
- Low On-State Voltage
- Fast Switching Speeds
